| PART |
Description |
Maker |
| K7Q161864B |
(K7Q161864B / K7Q163664B) 512Kx36 & 1Mx18 QDR TM b4 SRAM
|
Samsung semiconductor
|
| K7Q161854A K7Q161854A-FC10 K7Q161854A-FC13 |
512Kx36-bit, 1Mx18-bit QDR SRAM
|
Samsung semiconductor
|
| K7B163635B |
512Kx36 & 1Mx18 Synchronous SRAM
|
Samsung Electronics
|
| K7R163684B06 K7R161884B |
512Kx36 & 1Mx18 QDRTM II b4 SRAM
|
Samsung semiconductor
|
| K7Q161852A |
(K7Q161852A / K7Q163652A) 512Kx36 & 1Mx18 QDRTM b2 SRAM
|
Samsung semiconductor
|
| IS61DDPB41M18A/A1/A2 IS61DDPB451236A/A1/A2 |
1Mx18, 512Kx36 18Mb DDR-IIP(Burst 4) CIO SYNCHRONOUS SRAM
|
Integrated Silicon Solution, Inc
|
| IS61DDP2B41M18A IS61DDP2B451236A/A1/A2 IS61DDP2B41 |
1Mx18, 512Kx36 18Mb DDR-IIP(Burst 4) CIO SYNCHRONOUS SRAM
|
Integrated Silicon Solution, Inc
|
| K7P163666A-HC25 K7P163666A-HC33 K7P161866A-HC25 K7 |
1M X 18 STANDARD SRAM, 1.6 ns, PBGA119
512Kx36 AND 1Mx18 Synchronous Pipelined SRAM 512Kx361Mx18同步流水线的SRAM
512K X 36 STANDARD SRAM, 1.5 ns, PBGA119
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K7N161801A-QFCI25_20_16 K7N161845A-QFCI25_20_16 K7 |
512Kx36 & 1Mx18 Pipelined NtRAM
512Kx36 & 1Mx18 Pipelined NtRAM 512Kx36
512Kx36 & 1Mx18 Pipelined NtRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K7B161825A K7A163600A K7A163601A K7B163625A K7A161 |
512Kx36 & 1Mx18 Synchronous SRAM
64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM
Aluminum Snap-In Capacitor; Capacitance: 390uF; Voltage: 400V; Case Size: 35x30 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 470uF; Voltage: 250V; Case Size: 25x30 mm; Packaging: Bulk 512Kx36
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
ITT, Corp.
|
| IDT71P72804 IDT71P72604 IDT71P72604S167BQ IDT71P72 |
1.8V 1M x 18 QDR II PipeLined SRAM
1.8V 512K x 36 QDR II PipeLined SRAM
Storage, Cases
Tools, Applicator RoHS Compliant: NA
Nickel Cadmium Battery Pack; Voltage Rating:12V RoHS Compliant: NA
SIGN, FIRE EXTINGUISHER, 100X200MM; RoHS Compliant: NA
18Mb Pipelined QDRII SRAM Burst of 2 35.7流水线推QDRII SRAM的爆
18Mb Pipelined QDRII SRAM Burst of 2 2M X 9 QDR SRAM, 0.5 ns, PBGA165
18Mb Pipelined QDRII SRAM Burst of 2 2M X 9 QDR SRAM, 0.45 ns, PBGA165
|
IDT
http://
Integrated Device Technology, Inc.
|
